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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HFM101ER THRU HFM108ER SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any DO-214AC MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 * Weight : 0.057 gram 0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0.004 (0.102) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Reverse Energy ( Ir=1A ) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. SYMBOL VF IR trr 50 HFM HFM HFM HFM HFM HFM 101ER 102ER 103ER 104ER 105ER 106ER 1.0 1.3 50 5.0 100 75 HFM HFM 107ER 108ER 1.7 UNITS Volts uAmps uAmps uAmps nSec 2002-5 SYMBOL VRRM VRMS VDC IO IFSM CJ ER TJ, TSTG 15 20 -65 to + 150 HFM HFM HFM HFM HFM HFM 101ER 102ER 103ER 104ER 105ER 106ER 50 100 200 600 300 400 35 50 70 100 140 200 210 300 280 400 1.0 30 12 420 600 HFM HFM 107ER 108ER 800 560 800 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF mJ 0 C RATING AND CHARACTERISTIC CURVES ( HFM101ER THRU HFM108ER ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load (+) 25 Vdc (approx) (-) D.U.T 0 PULSE GENERATOR -0.25A (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 1.0 -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. 1cm SET TIME BASE FOR 10/20 ns/cm 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) 100 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ~H FM 10 6E 5E R~ R HF M 10 8E R HF R~ 04 M1 HF ER 10 TJ = 150 1.0 M1 M1 03E R 01E TJ = 100 1.0 .1 TJ = 25 HF .1 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT JUNCTION CAPACITANCE, (pF) 70 60 50 40 30 20 10 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDEC Method) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100 HFM 101 ER~ HFM ER HF TJ = 25 M 10 105 TJ = 25 HFM ER 106 ~HF M1 08E R RECTRON Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON |
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